SLE 5542

產品資料
產地:中國
包裝:250 張/盒, 2500 張/箱
重量:每箱重約 14KG
包裝箱尺寸:20×25×50 cm
MOQ:1000 張
付款方式:T/T, Paypal
付運港口:深圳

描述

SLE 5542

ISO / IEC 7810,7816標準ISO卡(薄卡)的物理規格
    • 尺寸: L86×W54×T0.76 (+/- 0.04)mm
    • 重量: 5.8g+/-0.5g
    • 顏色: 白色
印刷方式
    • 柯式,絲印, 燙;金, 銀, 彩金, 彩銀, UV 油印
印刷號碼
    • 熱昇華打印, 噴碼,鐳射碼, 打凸碼
材枓
    • PVC
表面處理
    • 光面,啞面
磁條選項
    • 低抗磁條: 300Oe, 350Oe
    • 高抗磁條:650Oe, 2750Oe, 4000Oe
其他工藝
    • 芯片編碼,簽名條,打孔
    • 表面過膜, 保護膜
低頻芯片選擇 125KHz
    • EM4100 / H4100, EM4200 / H4200 EM4102 / H4102, TK4100
    • EM4105, EM4305, EM4469, EM4450
    • T5557 / T5567 / ATA5567, Hitag1, Hitag2, HitagS
高頻芯片選擇 13.56MHz 
    • ISO / IEC 14443 A
      • Mifare 1K S50 / MF1 S50, Mifare 4K S70 / MF1 S70,
      • Mifare 1K-Compatible, Mifare Ultralight, Mifare DesFire
    • ISO / IEC 14443 B
      • ST SR176, SRI512, SRIS4K
      • I.CODE SLI SI2 / I.CODE 2, I.CODE 1, LRIS2K, LRI64
    • ISO / IEC 15693
      • INSIDE Picopass 32KS
    • Dual Standard Compliant of ISO/IEC 14443 and ISO/IEC 15693
      • Tag-IT Ti2048, Tag-IT Ti256, INSIDE 2K, Legic256
超高頻芯片選擇 860~960MHz
    • ISO 18000-6B
      • NXP UCODE HSL
      • NXP UCODE EPC V1.19
      • ISO 18000-6C
      • NXP UCODE EPC Gen 2
      • XRA000
      • XRA Gen 2
      • ATA5590
      • IMPINJ Monza
SLE 5542 Features
      • 100% functional compatibility to SLE 4442
      • 256 x 8 bit EEPROM organization of Data Memory
      • 32 x 1 bit Protection Memory
          • Byte-wise write protection of first 32 addresses (byte 0…31) of Data Memory
          • Manufacturer Code for unique identification of application
      • Data Memory (addresses 0…255) alterable only after verification of 3-Byte
        Programmable Security Code (PSC)
      • Two-wire link protocol
          • Byte-wise addressing
          • End of processing indicated at data output
      • Contact configuration and Answer-to-Reset (synchronous transmission) in accordance to standard ISO/IEC 7816
      • Sophisticated electrical characteristics
          • Ambient temperature –40 … +80°C for chip, –25 … +80°C for module
          • Supply voltage 5 V ± 10 %
          • Supply current < 3 mA (typical 600 µA)
          • EEPROM erase / write time 5 ms
          • ESD protection typical 4,000 V
          • EEPROM Endurance minimum 100,000 erase / write cycles)
          • Data retention for minimum of 10 years)
      • Advanced 1.2 µm CMOS-technology optimised for security layout
        • EEPROM-cells protected by shield
        • Shielding of deeper layers via metal
        • Sensory and logical security functions
        • No isolation on backside necessary
[saswp-reviews id="8481"]